Title :
A 2.7 V GSM RF transceiver IC
Author :
Irie, K. ; Matsui, H. ; Endo, T. ; Watanabe, K. ; Yamawaki, T. ; Kokubo, M. ; Hildersley, J.
Author_Institution :
Hitachi Ltd., Yokohama, Japan
Abstract :
This 2.7 V radio-frequency transceiver IC is intended for small, low-cost GSM handsets. All that is required to implement a GSM terminal radio section is this IC, a power amplifier module, dual-synthesizer IC, SAW filters, and other peripheral discrete components. This chip includes quadrature modulator phase-locked loop frequency translator with offset-mixer in the transmitter path, and a double-superhet receiver that consists of LNA with active-bias circuits, two Gilbert cell mixers, programmable gain linear amplifier, and quadrature demodulator. The circuit also contains frequency dividers with on-chip VHF VCO to simplify 2nd LO design. Power control functions are provided for independent transmit and receive operation. The IC is implemented in pure bipolar technology with f/sub T/=15 GHz, r/sub bb/´=150 /spl Omega/, and 0.6 /spl mu/m features (0.6 /spl mu/m BiCMOS process).
Keywords :
BiCMOS analogue integrated circuits; cellular radio; land mobile radio; transceivers; 2.7 V; BiCMOS process; GSM handset; Gilbert cell mixer; LNA; RF transceiver IC; SAW filter; active-bias circuit; bipolar technology; double-superhet receiver; dual-synthesizer IC; frequency divider; offset-mixer; on-chip VHF VCO; power amplifier module; power control; programmable gain linear amplifier; quadrature demodulator; quadrature modulator phase-locked loop frequency translator; transmitter; BiCMOS integrated circuits; Chirp modulation; GSM; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Telephone sets; Transceivers; VHF circuits;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585393