A GaAs HBT Power Amplifier with a Newly Active Bias Linearizer for W-CDMA Terminals

Author

Wen, Jin-Cai ; Sun, Ling-Ling

Author_Institution

Microelectron. CAD Center, Hangzhou Dianzi Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1727

Lastpage

1729

Abstract

In this paper, a newly active bias linearizer is introduced based on GaAs HBT technology. The proposed linearizer composed of active bias circuit and a reverse-biased diode maintains the fixed base voltage of power stage HBTs, effectively improves the gain compression, and more importantly, it consumes no additional die area and DC power. A two-stage power amplifier for wide-band code division multiple access (W-CDMA) application was designed to verify the novel technique. At an output power of 28 dBm, the linearizer improves input 1dB compression power by 6 dB and phase distortion by 17.8deg, respectively. Accordingly, the adjacent channel power ratio (ACPR) is also improved

Keywords

III-V semiconductors; code division multiple access; gallium arsenide; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; telecommunication terminals; GaAs; GaAs HBT power amplifier; GaAs HBT technology; W-CDMA terminals; active bias circuit; active bias linearizer; adjacent channel power ratio; gain compression; reverse-biased diode; wideband code division multiple access; Broadband amplifiers; Circuits; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Multiaccess communication; Phase distortion; Power amplifiers; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306407

Filename

4098524