5.8 GHz and 12.6 GHz Si bipolar MMICs

Wireless ATM in the 5 GHz band is the most recent addition to the family of multimedia applications. As in the case of lower-band and lower-speed wireless systems, the availability of low-cost silicon solutions is a prerequisite for its ubiquitous market presence. A family of circuits aimed at the wireless ATM and broadband multimedia applications is implemented in an implanted-base, double-poly Si bipolar technology. The process features bipolar transistors with f/sub T/, and f/sub MAX/ values of 24 GHz and 38 GHz, respectively at V/sub CE/=1 V. The minimum noise figure, NF/sub MIN/, is typically 2 dB at 5.5 GHz, while BV/sub CEO/ and BV/sub CBO/ are 4.2 V, and 15 V, respectively. The three-layer metallization with 2 /spl mu/m thick Al top layer allows for fabrication of inductors with Qs in the 6-10 range and microstrip and coplanar lines with Qs of 6 at 26 GHz. A 5.8 GHz double-balanced mixer and low-noise amplifier (LNA), and broadband 7.1 GHz and 12.6 GHz Darlington amplifiers from this family of circuits are discussed.