Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuits

Author

Jansen, S. ; Negus, K. ; Lee, D.

Author_Institution

Hewlett-Packard Co., Newark, CA, USA

fYear

1997

fDate

8-8 Feb. 1997

Firstpage

392

Lastpage

393

Abstract

This work introduces fully-integrated VCOs implemented in the mature ISOSAT silicon bipolar RFIC process. The ISOSAT silicon bipolar process has transistors with 15GHz f/sub T/ and 30GHz f/sub max/, along with MIS capacitors of Q > 50 and spiral inductors with Q up to 10 for the values and frequency range of interest. Recently, a voltage-variable capacitor (or varactor) was characterized within the process. This device has up to 3:1 capacitance range from 0 to 3V reverse bias and also has Q of 3060 in the 1.1-2.2GHz frequency range desired for these VCOs.

Keywords

UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; circuit tuning; elemental semiconductors; silicon; varactors; voltage-controlled oscillators; 0 to 3 V; 1.1 to 2.2 GHz; 15 GHz; 30 GHz; ISOSAT bipolar RFIC process; MIS capacitors; Si; UHF oscillators; VCO family; capacitance range; fully-integrated tank circuits; reverse bias; spiral inductors; tuning circuits; varactor; Capacitance; Capacitors; Frequency; Inductors; Radiofrequency integrated circuits; Silicon; Spirals; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3721-2

Type

conf

DOI

10.1109/ISSCC.1997.585455

Filename

585455