DocumentCode
3472864
Title
Effects of bandfilling on the threshold current of GaAs/AlGaAs multi quantum well lasers
Author
Nagarajan, Radhakrishnan ; Kamiya, Toshio ; Kurobe, Atsushi
fYear
1988
fDate
Aug. 29 1988-Sept. 1 1988
Firstpage
32
Lastpage
33
Abstract
In this paper we present an improved model for Multi Quantum Well (MQW) laser operation, carefully considering the bandfilling processes. And test its validity using experimental data for threshold current dependence on the cavity length and the number of wells.
Keywords
optical losses; optical waveguides; semiconductor junction lasers; GaAs; GaAs-AlGaAs; III-V semiconductors; MQW lasers; interfacial recombination velocity reduction; optical gain; optical losses; quantum well lasers; spontaneous emission factor; strained-layer semiconductor lasers; superlattice buffer layers; threshold current; waveguiding;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location
Boston, MA, USA
Type
conf
DOI
10.1109/SLCON.1988.26146
Filename
26146
Link To Document