Implementation of digital circuits in an InP scaled HBT technology

Author

Randall, B.A. ; Schwab, D.J. ; Walters, W.L. ; Nielsen, A.D. ; Amundsen, E.L.H. ; Sokolich, M.M. ; Brown, Y.K. ; Lui, M.M. ; Henige, J.A. ; Gilbert, B.K.

Author_Institution

Special Purpose Processor Dev. Group, Mayo Found., Rochester, MN, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

181

Lastpage

184

Abstract

The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium phosphide (InP) scaled heterojunction bipolar transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the f/sub T/ of the devices can be improved from 90 GHz for the HRL InP standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology. Mayo has designed several digital circuits in this scaled technology, the initial test results for which are reported in this paper.

Keywords

III-V semiconductors; bipolar digital integrated circuits; digital communication; heterojunction bipolar transistors; indium compounds; integrated circuit testing; 1 micron; 180 GHz; HRL Laboratories; InP; Mayo Foundation; decimator circuit; digital receivers; initial test results; scaled HBT technology; Circuit synthesis; Circuit testing; Clocks; Digital circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Laboratories;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803753

Filename

803753