Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices

In this work, we propose a simple and fast method to estimate the radiation-induced traps in P and N-MOS transistors independently. This method is based on standard current-voltage and Charge Pumping (I(V)-CP) to separate the radiation-induced border-traps (ΔN_bt) and true interface-traps (ΔN_it), where the radiation-induced oxide-traps (ΔN_ot) are extracted classically by measuring the threshold voltage (ΔV_th) or Mid-Gap (ΔV_mg) voltage shift. The charge pumping (CP) curves are measured using the rise and fall saw-tooth signal for N-and P-MOS transistors respectively, to minimize the border-trap estimation error caused by the difference in the energy band gap scanned by standard I(V) and CP techniques. Emphasis is made on critical comparison between the radiation induced ΔN_bt extracted using I(V)-CP and classical method such as OTCP and DTBT. According to experimental data, the I(V)-CP method is more accurate than OTCP and DTBT methods, since it is more sensitive than OTCP method for the extraction of border traps and it can gives all kinds of traps for P and N-MOS transistors separately.