DocumentCode :
3474339
Title :
High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source
Author :
Stabile, Paul J. ; Rosen, Arye ; Gilbert, Dean ; Zutavern, Fred J. ; Loubriel, Guillermo M.
Author_Institution :
David Sarnoff Research Center
fYear :
1991
fDate :
16-18 April 1991
Firstpage :
85
Lastpage :
89
Abstract :
High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.
Keywords :
Gallium arsenide; High speed optical techniques; Optical arrays; Optical devices; Optical pulses; Power lasers; Power semiconductor switches; Semiconductor diodes; Semiconductor laser arrays; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electro International, 1991
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ELECTR.1991.718180
Filename :
718180
Link To Document :
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