DocumentCode
3474582
Title
MOSFET modeling for RF-CMOS design
Author
Miura-Mattausch, Mitiko
Author_Institution
Adv. Sci. of Matter, Hiroshima Univ., Japan
fYear
2004
fDate
27-30 Jan. 2004
Firstpage
482
Lastpage
490
Abstract
Requirement for an accurate RF-MOSFET model is increasing as the trend to higher operation speed continues. We address observed phenomena obstructing circuit performance in the RF operating regime. The origin of the phenomena as well as their modeling will be discussed.
Keywords
CMOS integrated circuits; MOSFET circuits; logic design; radiofrequency integrated circuits; MOSFET modelling; RF operating regime; RF-CMOS design; circuit performance; Circuit optimization; Circuit simulation; Delay; Electronic mail; Equivalent circuits; MOSFET circuits; Parameter extraction; Physics; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific
Print_ISBN
0-7803-8175-0
Type
conf
DOI
10.1109/ASPDAC.2004.1337624
Filename
1337624
Link To Document