Title :
Numerical study on effects of random dopant fluctuation in double gate tunneling FET
Author :
Ying Zhu ; Ye Yun ; Yu Cao ; Jin He ; Aixi Zhang ; Hongyu He ; Hao Wang ; Chenyue Ma ; Yue Hu ; Mansun Chan ; Xiaoan Zhu
Author_Institution :
Shenzhen SOC Key Lab., Peking Univ., Shenzhen, China
Abstract :
Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano´s approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.
Keywords :
doping profiles; field effect transistors; high-k dielectric thin films; tunnel transistors; 3D device simulation; RDF; TFET performance sensitivity; electrical parameters; high-k gate dielectric; optimized DG TFET; optimized double-gate tunneling FET; random dopant fluctuation; random doping profiles; statistical device simulation; Biological system modeling; Logic gates; Resource description framework; Tunneling; Random Dopant Fluctuation (RDF); Tunneling FET; double gate (DG); high-k dielectric; variability;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628040
