Determination of Metallic Impurities in Various Semiconductor Chemicals by Using ORS Quadruploe ICP-MS

Author

Yeh, M.P. ; Ho, C.S. ; Hong, C.L. ; Lin, T.C.

Author_Institution

ProMOS Technol. Inc., Taichung

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

2181

Lastpage

2183

Abstract

This paper describes the determination of metallic impurities in various semiconductor chemicals by direct sample introduction and ORS (octopole reaction system) quadrupole ICP-MS analysis. Spike recovery test of seven elements (Na, Al, Ca, Cr, Fe, Ni, and Cu) are performed for nine chemicals (NH₄OH, TMAH, SC-1, HCl, HNO₃, H₂O₂, H₃PO₄, HF, and BHF). Our results shows that the spike recovery rates of seven elements are all within the range of 75 ~ 110% with 100ppt spiked solution. It is worthy to mention a better spike recovery is found for the H₂O₂ sample prepared in 1% HNO₃, instead of DIW. All the elements´ DL and BEC are less than 10 ppt in 1% HNO₃ matrix solution

Keywords

aluminium; calcium; chromium; copper; etching; impurities; iron; mass spectroscopic chemical analysis; nickel; organic compounds; semiconductor device manufacture; sodium; surface cleaning; surface contamination; Al; Ca; Cr; Cu; Fe; Na; Ni; ORS quadrupole ICP-MS analysis; SC-1; TMAH; direct sample introduction; metallic impurities; octopole reaction system; semiconductor chemicals; spike recovery test; Calibration; Chemical analysis; Chemical elements; Hydrogen; Interference; Plasma applications; Plasma chemistry; Plasma devices; Semiconductor impurities; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306674

Filename

4098661