DocumentCode
3474844
Title
A ring oscillator based reliability structure for NBTI & PBTI measurement
Author
Xiqing Wang ; Jie Hong ; Yandong He ; Ganggang Zhang ; Lin Han ; Xing Zhang
Author_Institution
Inst. of Microelectron. & Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.
Keywords
CMOS digital integrated circuits; integrated circuit reliability; oscillators; NBTI; PBTI; digital circuits; frequency degradation; negative bias temperature instability; positive bias temperature instability; reliability test; ring oscillator based reliability structure; size 90 nm; threshold voltage shift; voltage 1.2 V; Monitoring; Reliability; TV; NBTI; PBTI; reliability test; ring oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628048
Filename
6628048
Link To Document