Title :
CMOS Gate Oxide Integrity Failure Structure Analysis Using Transmission Electron Microscopy
Author :
Li, Y.G. ; Tan, S.H. ; Kuan, H.P. ; Tan, K.T. ; Duan, L.J.
Author_Institution :
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
Abstract :
In this paper, cross-sectional TEM combined with plan-view TEM analysis was employed to investigate the gate oxide integrity (GOI) failure isolated using infrared optical beam induced resistance change (IR-OBIRCH) method. The cross-sectional TEM investigation only shows gate oxide breakdown and fused active under the spacer. However, plan-view TEM analysis reveals clearly the breakdown happened at the poly edge due to smaller spacer related to over etch of spacer nitride or oxide. EF-TEM elemental mapping shows Co migrates electrically to the fused active area
Keywords :
CMOS integrated circuits; copper; electric breakdown; electromigration; failure analysis; transmission electron microscopy; CMOS gate oxide integrity; EF-TEM elemental mapping; IR-OBIRCH; cross-sectional TEM; failure structure analysis; gate oxide breakdown; infrared optical beam induced resistance change method; plan-view TEM analysis; transmission electron microscopy; Circuit faults; Cobalt; Electric breakdown; Failure analysis; Fault location; Optical beams; Semiconductor device manufacture; Semiconductor devices; Silicon; Transmission electron microscopy;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306677
