DocumentCode :
3474886
Title :
Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices
Author :
Hou, Yunhe ; Chen, Bing ; Gao, Bingzhao ; Lun, Z.Y. ; Xin, Ziling ; Liu, Richard ; Liu, L.F. ; Han, D.D. ; Wang, Yannan ; Liu, X.Y. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms´ diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed.
Keywords :
aluminium; hafnium compounds; platinum; random-access storage; titanium compounds; RRAM devices; atom diffusion; bipolar resistive switching phenomenon; reset process; resistive switching random access memory devices; robust self-compliance multilevel operation; self-compliance multilevel resistive switching characteristics; set process; Annealing; Hafnium oxide; Switches; HfOx; Multilevel storage; Resistive random access memory (RRAM);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628050
Filename :
6628050
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3474886
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