DocumentCode :
3475082
Title :
A low-voltage high-efficiency voltage doubler for thermoelectric energy harvesting
Author :
Jungmoon Kim ; Mok, Philip K. T. ; Chulwoo Kim ; Ying Khai Teh
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
This paper presents a low-voltage high-efficiency voltage doubler for thermoelectric energy harvesting. A negative charge pump is used to reduce on-resistance of PMOSFET load switches. Additional circuitry for achieving high efficiency just requires small chip-area and low-cost. The voltage doubler is implemented in 0.13-μm 1.2V CMOS process. The proposed doubler improves the low-voltage power efficiency by 17%, compared to conventional voltage doublers. Moreover, the proposed doubler can support wider load range. The maximum power efficiency reaches 52% at the input voltage of 0.2V.
Keywords :
CMOS integrated circuits; energy harvesting; field effect transistor switches; thermoelectric conversion; CMOS process; PMOSFET load switches; circuitry; low-voltage high-efficiency voltage doubler; low-voltage power efficiency; maximum power efficiency; negative charge pump; on-resistance reduction; thermoelectric energy harvesting; voltage 0.2 V; voltage 1.2 V; Charge pumps; Clocks; Energy harvesting; Logic gates; Manganese; Threshold voltage; Timing; Charge pump; energy harvesting; high efficiency; low voltage; negative charge pump; thermoelectric energy harvesting; voltage doubler;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628061
Filename :
6628061
Link To Document :
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