Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs

Author

Li, Jih-San ; Chen, Main-Gwo ; Juan, Pi-Chun ; Su, Kuan-Cheng

Author_Institution

Reliability Eng. Div., United Microelectron. Corp., Hsinchu

fYear

2006

fDate

Oct. 16 2006-Sept. 19 2006

Firstpage

16

Lastpage

19

Abstract

In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed

Keywords

MOSFET; semiconductor device reliability; thermal stability; AC factors; AC lifetimes; PMOSFET; delay time; dynamic stress; negative bias temperature instability; time-to-failure; Current measurement; Degradation; Delay effects; Frequency; MOSFETs; Negative bias temperature instability; Niobium compounds; Reliability engineering; Stress; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2006 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

1-4244-0296-4

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2006.305202

Filename

4098679