Title :
Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs
Author :
Li, Jih-San ; Chen, Main-Gwo ; Juan, Pi-Chun ; Su, Kuan-Cheng
Author_Institution :
Reliability Eng. Div., United Microelectron. Corp., Hsinchu
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed
Keywords :
MOSFET; semiconductor device reliability; thermal stability; AC factors; AC lifetimes; PMOSFET; delay time; dynamic stress; negative bias temperature instability; time-to-failure; Current measurement; Degradation; Delay effects; Frequency; MOSFETs; Negative bias temperature instability; Niobium compounds; Reliability engineering; Stress; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305202