Title :
Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film
Author :
Pengying Chang ; Xiaoyan Liu ; Lang Zeng ; Jieyu Qin ; Gang Du
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Strain effects on valence band structure in bulk and thin film In0.7Ga0.3As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the body thickness was also studied.
Keywords :
III-V semiconductors; effective mass; gallium arsenide; indium compounds; semiconductor thin films; valence bands; In0.7Ga0.3As; body thickness; effective mass evaluation; energy band splitting; energy band warping; in-plane biaxial stress; in-plane uniaxial stress; six-band k.p method; strain effects; thin film; valence band structure; Compounds; Educational institutions; Logic gates; Strain; Stress; In0.7Ga0.3As; Six-band k·p method; Strain effect; Valence band structure;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628065
