DocumentCode :
3475227
Title :
Process variability influence on complementary organic circuits characterictics
Author :
Guerin, M. ; Bergeret, E. ; Benevent, E. ; Pannier, P. ; Daami, Anis ; Coppard, R.
Author_Institution :
IM2NP, Marseille, France
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
This paper presents a study on the variability of N- and P-type organic transistors fabrication process and its consequences on organic circuits´ electrical performance. Model cards corresponding to the measured devices are carried out and permit to simulate organic circuits. A NAND gate, made of four transistors, is simulated, manufactured and electrically characterized. Even though an important dispersion among the transistors electrical characteristics is observed, all measured NAND gates are functional.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; logic gates; organic semiconductors; semiconductor device models; N-type organic transistors fabrication process; NAND gate; P-type organic transistors fabrication process; complementary organic circuits characterictics; process variability influence; transistors electrical characteristics; Laser ablation; Logic gates; Transistors; Organic; circuit; digital; logic gates; model card; process dispersion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628069
Filename :
6628069
Link To Document :
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