• DocumentCode
    3475263
  • Title

    Resisitive switching variability study on 1T1R AlOx/WOx-based RRAM array

  • Author

    Bin Jiao ; Ning Deng ; Jie Yu ; Yue Bai ; Minghao Wu ; Ye Zhang ; He Qian ; Huaqiang Wu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.
  • Keywords
    CMOS memory circuits; MOSFET; aluminium compounds; power consumption; random-access storage; tungsten compounds; 1T1R-based RRAM array; AlOx-WOx; array size; bilayer-based RRAM cells; commercial CMOS foundry; forming voltage; memory devices; parameters variations; power consumption; resisitive switching variability; resistive random access memories; switching process; transistor size; Arrays; Switches; AlOx; RRAM; WOx; variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628071
  • Filename
    6628071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475263