Title :
Laser patterned junctionless neuron thin-films transistor arrays
Author :
Li Qiang Zhu ; Qing Wan
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China
Abstract :
Indium-zinc-oxide (IZO) thin film transistors (TFT) have been fabricated on ITO/glass substrate with a laser scribing process at room temperature. Such transistors are composed of a bottom indium-tin-oxide (ITO) floating gate and multiples of in-plane control gates. The multiple input gates are not truly independent gates, capacitively coupling with the floating gate together, thus Neuron MOS (vMOS) operation is realized. The control gates, coupling with the floating gate, control the “on” and “off” of the neuron transistor. Robust AND logic is demonstrated on such neuron transistor.
Keywords :
MOSFET; indium compounds; laser materials processing; logic gates; nanopatterning; semiconductor materials; thin film transistors; ITO-SiO2; ITO-glass substrate; InZnO; bottom ITO floating gate; in-plane control gates; indium-zinc-oxide thin film transistors; laser patterned junctionless neuron thin-films transistor arrays; laser scribing process; neuron MOS operation; robust AND logic; temperature 293 K to 298 K; Logic gates; Substrates; Thin film transistors; AND Logic; Laser scribing; Neuron Thin-films transisotr (TFTs);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628075
