Title :
Fast and slow charge trapping/detrapping processes in high-k nMOSFETs
Author :
Heh, Dawei ; Choi, Rino ; Young, Chadwin D. ; Bersuker, Gennadi
Author_Institution :
SEMATECH, Austin, TX
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time
Keywords :
MOSFET; dielectric devices; dielectric relaxation; charge detrapping processes; charge trapping processes; high-k nMOSFET; relaxation effects; single pulse technique; threshold voltage; trap charging mechanisms; trap discharging mechanisms; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MOSFETs; Monitoring; Pulse measurements; Stress measurement; Temperature sensors; Threshold voltage; Time measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305224
