Title :
Analytical model for an extended field plate effect on trench LDMOS with high-k permittivity
Author :
Xiarong Hu ; Bo Zhang ; Xiaorong Luo ; Yongheng Jiang ; Kun Zhou ; Zhaoji Li
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An analytical model for the extended field plate effect on trench LDMOS with high-k permittivity is presented in this paper. The RESURF criterion for the trench LDMOS with extended field plate is derived, both analytical and numerical results show the drift doping is increased with high-k dielectric layer. The analysis of the breakdown mechanism is researched, and an optimal design is achieved that the voltage supported by dielectric layer is equal to the voltage supported by the drift region. The relative dielectric coefficient of high-k materials are in the range of 4~12 when the thickness of the dielectric layer is below 600nm. The breakdown voltage is decreased for a too high permittivity of the high-k material.
Keywords :
MIS devices; doping; electric breakdown; high-k dielectric thin films; isolation technology; permittivity; plates (structures); RESURF criterion; breakdown voltage; drift doping; drift region; extended field plate effect; high-k dielectric layer; high-k material permittivity; numerical results; relative dielectric coefficient; trench LDMOS; High K dielectric materials; Field Plate; LDMOS; RESURF; permittivity;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628106
