Title :
Temperature Effects on the Hot-Carrier Induced Degradation of pMOSFETs
Author :
Chen, Shuang-Yuan ; Tu, Chia-Hao ; Lin, Jung-Chun ; Kao, Po-Wei ; Lin, Wen-Cheng ; Jhou, Ze-Wei ; Chou, Sam ; Ko, Joe ; Haung, Heng-Sheng
Author_Institution :
Inst. of Mechatronic Eng., Nat. Taipei Univ. of Technol.
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
Low voltages in various stress modes and temperatures were applied on two kinds of pMOSFETs to investigate the hot-carrier (HC) induced degradation. Contrary to conventional concepts, this investigation demonstrates that the worst conditions for pMOSFET HC reliability involves CHC mode and at high temperature. The severity of degradation of pMOSFETs has become comparable to their nMOSFET counterparts. A probable damage mechanism is suggested to involve the generation of interface states by the integration of HC and negative biased temperature effect (NBTI). A new empirical lifetime model is proposed in terms of applied voltages and temperatures
Keywords :
MOSFET; hot carriers; interface states; semiconductor device breakdown; semiconductor device reliability; stress effects; MOSFET HC reliability; empirical lifetime model; hot-carrier induced degradation; interface states; negative biased temperature effect; probable damage mechanism; temperature effects; Degradation; Hot carrier effects; Hot carriers; Interface states; Low voltage; MOSFET circuits; Niobium compounds; Stress; Temperature distribution; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305236
