Title :
Surface Roughness Enhanced Current in Defectively Stressing Poly-Oxide-Poly Capacitors
Author :
Sheng, Lieyi ; De Backer, E. ; Wojciechowski, Dominique ; De Greve, J. ; Dhondt, Kurt ; Boonen, Sylvie ; Malschaert, Dimitri ; Snyder, Eric
Author_Institution :
AMI Semicond., Pocatello, ID
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
Surface roughness enhanced current stressing is shown to enhance the dielectric breakdown in poly-oxide-poly capacitors. Moreover, it is demonstrated for the first time that the changes of sophisticated polysilicon surface features as depicted by AFM-PSD (power spectral density) synthesis can globally become the dominant "defects" in deteriorating the dielectric reliability under a high electric field
Keywords :
capacitors; electric breakdown; reliability; stress effects; surface roughness; AFM-PSD synthesis; dielectric breakdown; dielectric reliability; high electric field; poly-oxide-poly capacitors; power spectral density; sophisticated polysilicon surface; surface roughness enhanced current stressing; Ambient intelligence; Annealing; Capacitors; Dielectric breakdown; Electronic mail; Etching; Rough surfaces; Sandwich structures; Surface roughness; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305247
