The recovery effect of hot-carrier degradation under dynamic stress condition for SOI-nLDMOS device

Author

Chunwei Zhang ; Siyang Liu ; Weifeng Sun ; Wei Su ; Yuwei Liu ; Guoan Chen ; Xiaowei He

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

The recovery effect of the hot-carrier degradation under the dynamic stress for the silicon-on-insulator n-type lateral DMOS (SOI-nLDMOS) was investigated in the paper. Based on the degradation of SOI-nLDMOS under the different duty cycle dynamic stress conditions, we found the serious recovery phenomenon. By further study, it was concluded that the de-trapping of hot-hole injecting into the bird´s beak region occurred when the stress changed from low V_gs and high V_ds condition to high V_gs and low V_ds condition. Moreover, the charge pumping (CP) and the simulation results also verified the conclusion.

Keywords

MIS devices; hot carriers; recovery; semiconductor device reliability; silicon-on-insulator; stress effects; SOI-nLDMOS device; Si; bird beak region; charge pumping; de-trapping; dynamic stress condition; hot-carrier degradation; hot-hole injection; recovery effect; silicon-on-insulator n-type lateral DMOS; Degradation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628131

Filename

6628131