• DocumentCode
    3477046
  • Title

    Shearing properties of low temperature Cu-In Solid-Liquid Interdiffusion in 3D package

  • Author

    Xin Zhao ; Yanhong Tian ; Ning Wang

  • Author_Institution
    State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    143
  • Lastpage
    147
  • Abstract
    With the rapid development of three-dimensional integrated circuit packaging technology, through silicon via (TSV) has been used to bond the stacked chips. Cu-In Solid-Liquid Interdiffusion (SOLID) low temperature bonding is a promising process for TSV stacked chip interconnection. In this paper, shearing properties of Cu/In/Cu SOLID bonding joints was studied. A specific Cu-In solder joint was designed for the test. The samples used in shear test were bonded at two different temperatures, 260 °C and 360 °C, for three different time, including 40min, 160min and 360min, respectively. Scanning Electron Microscope(SEM) and Energy-dispersive X-ray(EDX) were used to observe the fractured morphologies after shear test. The results reveal that shear strength of Cu-In solder joints increases as bonding time prolonged for samples bonded at 260°C, while the strength of samples bonded at 360°C stay constant as the bonding time increases. Fracture observation after shear test showed that fracture mode of solder joints is brittle fracture. Cleavage fracture is mainly found in solder joints bonded at 260°C. There are many tongue-patterns found on the fracture of solder joints bonded at 260°C for 360 min. Cleavage fracture is preferred for solder joints bonded at 360°C for both 40 min and 160 min, found at Cu2In phase. Comparatively, for those bonded at 360°C for 360 min, both intergranular fracture and cleavage fracture were found.
  • Keywords
    X-ray chemical analysis; brittle fracture; chip scale packaging; copper alloys; diffusion bonding; indium alloys; integrated circuit bonding; integrated circuit reliability; integrated circuit testing; scanning electron microscopy; shearing; solders; three-dimensional integrated circuits; 3D integrated circuit packaging technology; 3D package; Cu-In-Cu; EDX; SEM; SOLID low temperature bonding; TSV stacked chip interconnection; brittle fracture; cleavage fracture; energy-dispersive X-ray; fractured morphologies; intergranular fracture; low temperature solid-liquid interdiffusion; scanning electron microscope; shearing properties; solder joint; temperature 260 degC; temperature 360 degC; through silicon via; time 160 min; time 360 min; time 40 min; tongue-patterns; Bonding; Morphology; Silicon; Soldering; Solids; Surface cracks; Surface morphology; SOLID bonding; fractography; microstructure; shear test;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756442
  • Filename
    6756442