• DocumentCode
    3477058
  • Title

    The Impact of Nonequilibrium Gain in a Spectral Laser Model

  • Author

    Bream, P.J. ; Lim, J.J. ; Bull, S. ; Sujecki, S. ; Larkins, E.C.

  • Author_Institution
    Nottingham Univ.
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    We present results from an efficient, self-consistent spectral laser model, which incorporates nonequilibrium gain and is suitable for the routine simulation of quantum well laser diodes. Nonequilibrium gain is calculated using a dynamic gain model, which simulates the dynamic relaxation of the quantum well carrier energy distributions under the influence of continuous-wave electrical and optical excitation. The spectral laser model employs a 20 bipolar electrical model solved in the lateral and epitaxial directions. The optical field is solved in the lateral and longitudinal directions using the 20 wide-angle beam propagation method. Steady state nonequilibrium gain is included in the laser model via parameterized look up tables. Results show that the inclusion of nonequilibrium gain is essential for the prediction of device operating characteristics, even when the device is operated in continuous-wave mode
  • Keywords
    laser beams; quantum well lasers; semiconductor device models; continuous-wave electrical excitation; device operating characteristics; dynamic gain model; dynamic relaxation; nonequilibrium gain; optical excitation; parameterized look up tables; quantum well carrier energy distribution; quantum well laser diode; spectral laser model; wide-angle beam propagation method; Laser modes; Laser theory; Nonlinear optics; Optical coupling; Optical refraction; Optical scattering; Optical variables control; Quantum well lasers; Semiconductor process modeling; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
  • Conference_Location
    Nanyang Technological University, Nanyang Executive Centre, Singapore, China
  • Print_ISBN
    0-7803-9755-X
  • Type

    conf

  • DOI
    10.1109/NUSOD.2006.306731
  • Filename
    4098771