DocumentCode :
3477667
Title :
Periodic pulse reverse copper filling for void-free through-via filling
Author :
Zhu, Q.S. ; Toda, Akira ; Zhang, Ye ; Itoh, Takayuki ; Maeda, Ryutaro
Author_Institution :
NMEMS Technol. Res. Organ., Tsukuba, Japan
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
284
Lastpage :
287
Abstract :
In this work, a study of TSVs electrodeposition filling by the periodic pulse reverse current was performed in a plate solution without additives. A void-free filling was obtained at a lower current density while a hollow or seam structures were obtained at a higher current density. A “bottom-up” growth mode could be realized at the lower current density. The current distribution uniformity inside a via was expressed by a function of the Thiele modulus, μ. The Thiele modulus was calculated to be less than 1 at a lower applied current density and more than 1 at higher applied current density, which corresponded to a void-free filling and void-formation filling respectively.
Keywords :
copper; current density; current distribution; electrodeposition; integrated circuit packaging; three-dimensional integrated circuits; Cu; Thiele modulus; bottom-up growth mode; current density; current distribution uniformity; electrodeposition filling; periodic pulse reverse copper filling; periodic pulse reverse current; plate solution; void-formation filling; void-free through-via filling; Additives; Copper; Current density; Electrodes; Electronics packaging; Filling; Through-silicon vias; TSV filling; Thiele modulus; bottom-up growth; electrodeposition; periodic pulse reverse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756472
Filename :
6756472
Link To Document :
بازگشت