Title :
A 40–80-GHz mHEMT single-pole-double-throw switch using traveling-wave concept
Author :
Tsai, Yi-Chien ; Kuo, Jing-Lin ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper presents a 40-80-GHz SPDT switch fabricated in mHEMT process. The SPDT switch accomplished insertion loss lower than 2.4 dB and isolation better than 23 dB. Via holes were shared to compact the layout and the chip size of 1 x 1 mm2 is obtained. Table 1 summarizes recently reported performance of SPDT switches in GaAs HEMT process.
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; millimetre wave devices; GaAs; SPDT switch; frequency 40 GHz to 80 GHz; mHEMT single-pole-double-throw switch; traveling-wave concept; CMOS process; Gallium arsenide; HEMTs; Impedance; Insertion loss; Radio frequency; Semiconductor device measurement; Switches; Switching circuits; mHEMTs;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4957902
