Beam-plasma concepts for wafer charging control during ion implantation

Author

Current, Michael I. ; Vella, Michael C. ; Lukaszek, Wes

Author_Institution

Dept. of Appl. Mater., Capital of Texas Highway, Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

53

Lastpage

56

Abstract

With the development of quantitive measures of current-voltage characteristics (CHARM(R)-2) and a beam-plasma model for charge flows to and from the wafer surface, a more comprehensive view of wafer charging has emerged. A beam-plasma model has been developed which describes both positive and negative current-voltage characteristics of the beam plasma. A quantitative description has been achieved for a variety of charge control systems; including dense and dilute plasma flows, electron showers as well as for photoresist outgassing effects

Keywords

ion implantation; plasma flow; plasma simulation; plasma transport processes; semiconductor process modelling; surface charging; surface potential; CHARM-2; beam-plasma model; charge flows; current-voltage characteristics; dense plasma flow; dilute plasma flow; electron showers; ion implantation; photoresist outgassing effects; wafer charging control; wafer surface; Charge measurement; Control systems; Current measurement; Current-voltage characteristics; Particle beams; Plasma density; Plasma measurements; Plasma properties; Semiconductor device modeling; Surface charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586119

Filename

586119