DocumentCode
3478428
Title
Molecular Dynamics study of thermal conductivity in bismuth telluride thin films
Author
Chunjin Hang ; Shaopeng Sun ; Panpan Lin ; Chunqing Wang
Author_Institution
State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
413
Lastpage
416
Abstract
Low-dimensional thermoelectric materials are believed to have higher energy transformation efficiency compared to bulk materials. In this work, the thermal conductivities in normal direction of bismuth telluride thin films have been studied using Non-equilibrium Molecular Dynamics (NEMD) with a two-body potential. We predict the thermal conductivity in films with a thickness range of 6-40nm at 100, 150, 200, 250 and 300 K. The results show that the thermal conductivities in normal direction in Bismuth Telluridethin films are much lower than those in bulk materials, and decrease with the increase of working temperature, and increase while the thickness of bismuth telluride thin film increases due to phonon scattering.
Keywords
bismuth compounds; molecular dynamics method; thermal conductivity; thermoelectricity; thin films; BiTe; NEMD; bismuth telluride thin films; bulk materials; energy transformation; low-dimensional thermoelectric materials; nonequilibrium molecular dynamics; phonon scattering; size 6 nm to 40 nm; temperature 100 K; temperature 150 K; temperature 200 K; temperature 250 K; temperature 300 K; thermal conductivity; two-body potential; working temperature; Bismuth; Computational modeling; Conductivity; Heating; Materials; Tellurium; Thermal conductivity; bismuth telluride; molecular dynamics; thermal conductivity; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756502
Filename
6756502
Link To Document