Title :
Photoluminescence from a VCSEL structure a-SiN/sub x/:H microcavity
Author :
Serpenguzel, A. ; Darici, Y.
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
Summary form only given. Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiN/sub x/:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiN/sub x/:H microcavity formed with metallic mirrors. The a-SiN/sub x/:H used in the microcavity was grown both with and without NH/sub 3/. For the Si rich a-SiN/sub x/:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiN/sub x/:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiN/sub x/:H in a VCSEL structure microcavity.
Keywords :
amorphous semiconductors; hydrogen; microcavity lasers; photoluminescence; silicon compounds; surface emitting lasers; SiN:H; VCSEL structure; a-SiN/sub x/:H microcavity; bright spectrally pure luminescence; hydrogenated amorphous silicon nitride; photoluminescence; photonic gain medium; Energy states; Land surface temperature; Laser transitions; Microcavities; Photoluminescence; Spontaneous emission; Stationary state; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807635