Title :
Photoresist integrity during high energy implant
Author :
Parrill, T.M. ; Jones, Mary ; Jain, Amitabh
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Photoresist integrity was evaluated on a commercial high-energy ion implanter operated up to the specified energy (1.7 MeV B or 3.0 MeV P) and power (1.0 MeV B at 1000 pμA or 2.0 MeV P at 500 pμA) limits. SEM Cross-sectional analysis of several photoresists showed that the proper cooling was maintained to avoid significant photoresist degradation. Photoresist shrinkage was observed, resulting in thickness reductions up to 22% and significant changes in sidewall slope. Little asymmetry was observed when photoresist was implanted at a 7° tilt. At the specified power limits, photoresist outgassing prevented smooth implant operation unless pressure compensation was implemented
Keywords :
ion implantation; photoresists; scanning electron microscopy; 1.0 to 3.0 MeV; B; P; SEM cross-sectional analysis; cooling; high-energy ion implantation; outgassing; photoresist integrity; pressure compensation; shrinkage; sidewall slope; Cooling; Degradation; Electrical resistance measurement; Geometry; Implants; Instruments; Pressure measurement; Resists; Scanning electron microscopy; Testing;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586178
