DocumentCode :
3479035
Title :
UV curing and photoresist outgassing in high energy implantation
Author :
Jones, Mary A. ; Erokhin, Yuri ; Horsky, Tom ; Insalaco, Linda ; Whiteside, Donna ; Slater, Sydney ; Buffat, Steve ; Kickel, Bernice ; Parrill, Thomas ; Jie Xu, Jie
Author_Institution :
Eaton Corp., Beverly, MA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
182
Lastpage :
185
Abstract :
Thick photoresists, typically 3 microns or more in thickness, necessary for high energy implantation present some unique problems. The outgassing of thick photoresist in high energy applications varies from that of thinner resist and lower energies. It requires appropriate processing to cure without reticulation of field regions, deformity of features, or blistering during subsequent processing. This paper examines different resist treatments and their effects on implanter pressure during processing. Data on outgassing of thick photoresist, outgassing effects on absolute dose and dose uniformity as measured by sheet resistance contour maps, and the variation in gas composition are presented
Keywords :
ion implantation; photoresists; UV curing; absolute dose; dose uniformity; gas composition; high energy implantation; photoresist outgassing; sheet resistance contour map; CMOS process; Curing; Doping; Electrical resistance measurement; Energy resolution; Implants; Instruments; Ion implantation; Resists; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586179
Filename :
586179
Link To Document :
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