Title :
Effect of SAB process on GaN surfaces for low temperature bonding
Author :
Wakamatsu, Tsuguharu ; Suga, Tadatomo ; Akaike, Masatake ; Shigetou, Akitsu ; Higurashi, Eiji
Author_Institution :
Univ. of Tokyo, Tokyo
fDate :
Jan. 16 2007-Yearly 18 2007
Abstract :
In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature by the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.
Keywords :
aluminium; elastic deformation; gallium compounds; low-power electronics; radiation effects; surface roughness; surface treatment; wafer bonding; Al; Al - Element; Ar-FAB irradiation; GaN; GaN - Surface; GaN surfaces; SAB process; bonding strength; contact field; elastic deformation; incident angle; low temperature bonding; surface activation process; surface roughness; Atomic force microscopy; Atomic measurements; Gallium nitride; Plasma temperature; Power engineering and energy; Precision engineering; Rough surfaces; Surface cleaning; Surface roughness; Wafer bonding; GaN; The Surface Active Bonding (SAB) method;
Conference_Titel :
Polymers and Adhesives in Microelectronics and Photonics, 2007. Polytronic 2007. 6th International Conference on
Conference_Location :
Odaiba, Tokyo
Print_ISBN :
978-1-4244-1186-3
Electronic_ISBN :
978-1-4244-1186-3
DOI :
10.1109/POLYTR.2007.4339134
