An analytical IGBT model for power circuit simulation

Author

Shen, Zheng ; Chow, T. Paul

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1991

fDate

22-24 Apr 1991

Firstpage

79

Lastpage

82

Abstract

On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical CAD (computer-aided design) model for an IGBT (insulated-gate bipolar transistor) is developed which has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a mathematically simple form with readily extractable model parameters. The static model has been implemented in the circuit simulator SPICE. A systematic method of DC model parameter extraction is developed based on the parameter optimization program TOPEX. A set of model parameters extracted for a n-channel 600-V, symmetric IGBT is shown. Good agreement has been obtained between the simulation results and measurements

Keywords

electronic engineering computing; equivalent circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; DC model parameter extraction; IGBT model; SPICE; TOPEX; computer-aided design; insulated-gate bipolar transistor; parameter optimization program; power circuit simulation; static model; transient model; two-dimensional numerical simulation; Analytical models; Circuit simulation; Computational modeling; Design automation; Insulated gate bipolar transistors; Insulation; Mathematical model; Numerical simulation; Power system modeling; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146071

Filename

146071