Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography

Author

Ling, J.H.L. ; Tay, A.A.O. ; Choo, Kok Fah

Author_Institution

Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

843

Lastpage

847

Abstract

The reliability of power microwave devices is often determined by its peak operating junction temperature. In this paper, an accurate thermal characterization of a Gallium Nitride power amplifier Monolithic Microwave Integrated Circuit device using Thermoreflectance thermography is presented. The measured gate temperatures using Thermoreflectance thermography are compared with measured temperatures using Infrared thermography and calculated temperatures from finite element analysis.

Keywords

III-V semiconductors; MMIC power amplifiers; finite element analysis; gallium compounds; infrared imaging; integrated circuit reliability; thermal analysis; thermoreflectance; wide band gap semiconductors; GaN; PA MMIC; finite element analysis; gallium nitride power amplifier monolithic microwave integrated circuit device; infrared thermography; measured gate temperatures; peak operating junction temperature; power microwave device reliability; thermal characterization; thermoreflectance thermography; Aluminum; Electronic packaging thermal management; Gallium nitride; Logic gates; MMICs; Semiconductor device measurement; Temperature measurement; IR thermography; MMIC; Power Amplifier; Thermoreflectance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756595

Filename

6756595