Electromigration induced stress in through-silicon-via (TSV)

Author

Fei Su ; Zixing Lu ; Ping Liu ; Weijia Li

Author_Institution

Sch. of Aeronaut. Sci. & Eng., Beijing Univ. of Aeronaut. & Astronaut., Beijing, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

896

Lastpage

902

Abstract

In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.

Keywords

electromigration; finite element analysis; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; three-dimensional integrated circuits; ABAQUS platform; TSV reliability; coupling equation; electromigration induced stress; finite element method; stress-mass diffusion; through silicon via; Current density; Electromigration; Equations; Finite element analysis; Mathematical model; Stress; Through-silicon vias; Electromigration induced stress (EIS); Finite element; through-silicon-via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756606

Filename

6756606