• DocumentCode
    3480771
  • Title

    A study on residual stress measurement using I-V characteristics of bent-beam actuators

  • Author

    Lee, Soo ; Lee, Byeungleul ; Chun, Kukjin

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    847
  • Abstract
    Develops a new class of sensitive and compact passive stress measurement pattern that use piezoresistivity of polysilicon. The measurement pattern utilizes a pair of bent-beam actuators connected by a central beam. The bent-beam actuators are 15 μm wide, 200 μm long, and bent 0.1 radians (0.73°). The central beam is 5 μm wide, 264 μm long. The bent-beam actuators amplify and transform deformations caused by residual stress into elongation or contraction of the central beam. The length change causes resistance change of a central beam. We can measure residual stress by measuring the change of resistance. It is shown that tensile and compressive residual stress levels about 10 MPa, corresponding to strains below 6×10-5 , can be measured in 40 μm-thick layer of polysilicon. The pattern is suitable for post-packaging stress measurement because of electrical measurement
  • Keywords
    elemental semiconductors; internal stresses; microactuators; piezoresistance; silicon; stress measurement; tensile testing; 15 micron; 200 micron; 264 micron; 40 micron; 5 micron; I/V characteristics; Si; bent-beam actuators; compressive stress levels; contraction; deformations; elongation; length change; passive stress measurement pattern; piezoresistivity; polysilicon; post-packaging measurement; residual stress measurement; resistance change; tensile stress levels; Actuators; Bridges; Educational institutions; Electric variables measurement; Electrical resistance measurement; Electrostatic measurements; Optical sensors; Piezoresistance; Residual stresses; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
  • Print_ISBN
    0-7803-7101-1
  • Type

    conf

  • DOI
    10.1109/TENCON.2001.949714
  • Filename
    949714