DocumentCode
3481063
Title
Ion optics of parallel scan implanter using two octupole deflectors
Author
Tsukakoshi, Osamu ; Niikura, Kouichi ; Nishihashi, Tsutomu ; Mihara, Yasuo ; Sakurada, Yuzo
Author_Institution
ULVAC Japan Ltd., Kanagawa, Japan
fYear
1996
fDate
16-21 Jun 1996
Firstpage
342
Lastpage
345
Abstract
Ion optics of parallel scan type ion implanter using two geometrically similar octupoles are described. By ion optical analysis taking into account fringing effect of octupoles and checking up with experiment, it has become clear that the dose contour lines are concentric ellipses calculatable from dimensional parameters of the scanner composed of two octupoles. Parallel scan implanters up to 430 kev for 8-inch wafers have been successfully designed and manufactured based on this fact
Keywords
ion implantation; ion optics; 430 keV; 8 inch; dose contour lines; fringing effect; ion optics; octupole deflector; parallel scan ion implanter; Bellows; Geometrical optics; Ion beams; Ion implantation; Manufacturing processes; Optical amplifiers; Particle beam optics; Physics; Power amplifiers; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586279
Filename
586279
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