DocumentCode :
348110
Title :
Modeling yield throughout the DRAM product life cycle
Author :
Simmons, Steven
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fYear :
1999
fDate :
1999
Firstpage :
123
Lastpage :
126
Abstract :
This paper presents a modeling technique for predicting DRAM die-per-wafer yield throughout a product´s fabrication life cycle. Using manufacturing yield data, it is shown that an accurate mature yield prediction for a wide range of product types can be made by modifying the standard Poisson yield model to account for defect clustering, minimum dimension, and process complexity. It is also shown that an invariable learning factor can be derived using a learning curve equation based on average fabrication cycle time. This derivation leads to an accurate yield forecast through time
Keywords :
DRAM chips; Poisson distribution; fault diagnosis; integrated circuit modelling; integrated circuit yield; DRAM die-per-wafer yield; DRAM product life cycle; Poisson yield model; average fabrication cycle time; defect clustering; invariable learning factor; learning curve equation; manufacturing yield data; minimum dimension; process complexity; scaled Poisson model; yield modeling; Fabrication; History; Integrated circuit modeling; Integrated circuit yield; Predictive models; Profitability; Random access memory; Semiconductor device modeling; Testing; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
0-7803-5403-6
Type :
conf
DOI :
10.1109/ISSM.1999.808753
Filename :
808753
Link To Document :
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