The trench planar insulated gate bipolar transistor (TPIGBT)

Author

Spulber, O. ; Narayanan, E. M Sankara ; De Souza, M.M. ; Sweet, M. ; Bose, J.V.S.C. ; Hardikar, S.

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK

Volume

1

fYear

1999

fDate

1999

Firstpage

51

Abstract

A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT. Simulation results demonstrate that even the use of shallow trench of 3 μm can result in a low on-state voltage drop. Furthermore, the increased concentration of mobile charges, as a result of enhanced electron injection achieved through hole pile-up, can result in an increase in the turn-off time

Keywords

hole density; insulated gate bipolar transistors; isolation technology; power bipolar transistors; semiconductor device models; I-V characteristics; TMA-MEDICI; enhanced electron injection; hole pile-up; low on-state voltage drop; mobile charge concentration; on-state performance; resistive turn-off; shallow trench; simulation; trench planar IGBT; turn-off time; vertical hole distribution; Carrier confinement; Cathodes; Charge carrier processes; Displays; Electron mobility; Geometry; Insulated gate bipolar transistors; Lithography; Low voltage; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810385

Filename

810385