A preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing

Author

Badila, M. ; Jorda, Xavier ; Millan, James ; Godignon, Ph. ; Banu, V. ; Brezeanu, Gh ; Spenea, M. Udrea ; Staicu, Liliana ; Iliescu, Elena ; Bazu, M. ; Codreanu, Cecilia

Author_Institution

IMT Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

55

Abstract

A comparative study on medium voltage VDMOS and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. Consequently, the VDMOS structures were used as test vehicle for encapsulation, reliability and lifetime killing studies. It was found that the base material characteristics play a main role in the encapsulation yield and assure better reliability capability. The electron irradiation assures an effective and perfect controllable lifetime killing with adjacent threshold voltage reduction and breakdown voltage increasing

Keywords

carrier lifetime; electron beam effects; encapsulation; insulated gate bipolar transistors; plastic packaging; power MOSFET; power bipolar transistors; semiconductor device breakdown; semiconductor device packaging; semiconductor device reliability; IGBT; VDMOS; adjacent threshold voltage reduction; base material characteristics; breakdown voltage increase; device similarity; electrical characteristics; electron irradiation; encapsulation yield; internal cell; lifetime killing; medium voltage; reliability; Electric variables; Electrons; Encapsulation; Insulated gate bipolar transistors; Life testing; Materials reliability; Medium voltage; Threshold voltage; Vehicles; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810386

Filename

810386