Image of phonon spectrum in the 1/f noise of semiconductors

Author

Mihaila, Mihai N.

Author_Institution

Nat. Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

117

Abstract

A close connection between 1/f noise parameter and the phonon density of states is suggested. According to this hypothesis, the temperature dependence of the 1/f noise parameter would follow the energy dependence of the phonon density of states (PDOS). Existing noise data for GaAs are compared with the corresponding PDOS. Striking resemblances are found, such that the temperature dependence of the 1/f noise parameter seems to be the image of the phonon spectrum. Consequently, a connection between the activation energy distribution function and PDOS is revealed and lattice anharmonicity appears to naturally affect the frequency exponent. These results strongly support the idea that 1/f noise in semiconductors is generated by equilibrium atomic motion

Keywords

1/f noise; III-V semiconductors; elemental semiconductors; gallium arsenide; lattice dynamics; phonon spectra; semiconductor thin films; silicon; 1/f noise; GaAs; Si; activation energy distribution function; energy dependence; equilibrium atomic motion; lattice anharmonicity; phonon density; phonon density of states; phonon spectrum; temperature dependence; Fluctuations; Frequency; Gallium arsenide; Lattices; Light scattering; Noise generators; Phonons; Platinum; Semiconductor device noise; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810443

Filename

810443