6H-SiC MOSFET structures for power device fabrication process characterisation

Author

Godignon, P. ; Berberich, S. ; Morvan, E. ; Jorda, Xavier ; Flores, D. ; Montserrat, J. ; Rebollo, J. ; Ottaviani, L.

Author_Institution

CSIC, Barcelona, Spain

Volume

1

fYear

1999

fDate

1999

Firstpage

179

Abstract

N-channel MOSFETs on Silicon Carbide (SiC) have been fabricated in order to characterise the SiC process technology. From the analysis of MOSFET and test structure electrical characteristics, we can extract parameters concerning channel properties, oxide and interface quality as well as ohmic contact resistivity. Temperature behaviour is also analysed since it differs from standard Silicon (Si) device behaviour

Keywords

MOS capacitors; carrier mobility; contact resistance; high-temperature electronics; interface states; ohmic contacts; power MOSFET; semiconductor device testing; semiconductor technology; silicon compounds; wide band gap semiconductors; 300 K; 4 mum; 423 K; 6H-SiC MOSFET structures; MOS capacitors; N-channel MOSFETs; SiC; channel properties; enhancement mode MOSFET; interface quality; inversion layer mobility; ohmic contact resistivity; oxide quality; power device fabrication process characterisation; temperature behaviour; test structure electrical characteristics; Cleaning; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Oxidation; Power MOSFET; Silicon carbide; Substrates; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810457

Filename

810457