Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

Author

Nallet, F. ; Planson, D. ; Isoird, K. ; Locatelli, M.L. ; Chante, J.P.

Author_Institution

Inst. Nat. des Sci. Appliquees, Villeurbanne, France

Volume

1

fYear

1999

fDate

1999

Firstpage

195

Abstract

This paper proposes a comparison between 1500 V Si bipolar diode and 1500 V 4H-SiC bipolar diode operations. The 1500 V blocking voltage is chosen because it corresponds to the highest rating for commercial silicon high voltage rectifiers. Electrical simulations (ISE program) are performed taking into account structure descriptions in agreement with the technology state of the art. The static and dynamic characteristics are given versus temperature for both materials. The impact of the higher thermal conductivity of SiC on the operating diode junction temperature is presented. These results are discussed in terms of application interests

Keywords

high-temperature electronics; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor device models; silicon compounds; solid-state rectifiers; thermal conductivity; wide band gap semiconductors; 1500 V; 4H-SiC bipolar diode; ISE program; Si; Si bipolar diode; SiC; blocking voltage; dynamic characteristics; electrical simulations; high voltage rectifiers; operating diode junction temperature; reverse I-V characteristics; static characteristics; structure descriptions; switching behavior; thermal behavior; thermal conductivity; Bismuth; Circuit simulation; Photonic band gap; Rectifiers; Semiconductor diodes; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810461

Filename

810461