A comparison between the complexant alkaline etching systems of silicon

Author

Moldovan, Carmen ; Iosub, Rodica ; Dascalu, Dan ; Marin, Gheorghe ; Danila, Carmen

Author_Institution

Nat. Inst. for R&D in Microtechnol., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

205

Abstract

This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H₂O with complexant added. The complexant used is Azo calix[4]arene. The alkaline solutions are compared and analysed with and without complexant added from the point of view of hillocks, and the behaviour of the solutions is explained using the theory of molar conductivity. The results allow us to use the alkaline solutions and the organic complexant to monitor the etching process and to obtain a smooth silicon surface, almost free of hillocks

Keywords

elemental semiconductors; etching; process monitoring; silicon; solutions; surface topography; Azo calix[4]arene; KOH; LiOH-H₂O; NaOH; Si; alkaline solutions; complexant alkaline etching systems; etching process monitoring; hillock elimination; molar conductivity; organic complexant; smooth Si surface; wet anisotropic etching; Anisotropic magnetoresistance; Conductivity; Hydrodynamics; Monitoring; Research and development; Rough surfaces; Silicon; Surface roughness; Temperature dependence; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810463

Filename

810463