Title :
TiO2-MOCVD thin films on large area macroporous silicon for capacitor applications
Author :
Angelescu, Anca ; Kleps, Irina ; Battiston, G.A. ; Gerbasi, Rosalba ; Samfirescu, Narcis
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The authors present results of the deposition and characterization of TiO2 thin films, prepared by low pressure metal organic chemical vapor deposition (MOCVD) at 400°C in an N2 or N 2/O2 atmosphere using titanium tetraisopropoxide as precursor. The electrical resistivity as a function of thermal treatment is reported and discussed in relation to the microstructure. The crystallographic structure and crystallite dimensions are determined by X-ray diffraction spectrometry. The application of TiO2 thin films as the dielectric layer for a capacitor on macroporous silicon is reported
Keywords :
MIS structures; MOCVD; MOCVD coatings; MOS capacitors; X-ray diffraction; crystal microstructure; dielectric thin films; electric breakdown; electrical resistivity; elemental semiconductors; porous semiconductors; silicon; titanium compounds; 400 C; MIS structures; N2; N2 atmosphere; N2-O2; N2/O2 atmosphere; TiO2 MOCVD thin films; TiO2-Si; X-ray diffraction spectrometry; breakdown voltage; capacitor applications; crystallite dimensions; crystallographic structure; dielectric layer; electrical resistivity; large area macroporous Si; low pressure metal organic chemical vapor deposition; microstructure; thermal treatment; titanium tetraisopropoxide precursor; Atmosphere; Chemical vapor deposition; Dielectric thin films; Electric resistance; MOCVD; Microstructure; Organic chemicals; Sputtering; Thermal resistance; Titanium;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810464
