• DocumentCode
    348203
  • Title

    Experiments on radiation induced effects in the Si/SiO2 system

  • Author

    Codreanu, Cecilia ; Iliescu, Elena ; Badoiu, Aritina ; Dragan, M.

  • Author_Institution
    Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    239
  • Abstract
    This paper presents the results of an experimental study on MOS capacitor test structures with different oxide thickness and exposed to different irradiation conditions and post-irradiation annealing treatments. Test samples were fabricated on N-type silicon wafers of ⟨111⟩ orientation and 5-10 Ω cm resistivity. Irradiation was performed at different temperatures in a 7 MeV linear electron accelerator
  • Keywords
    MOS capacitors; annealing; electron beam effects; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; 7 MeV; MOS capacitor; Si-SiO2; Si/SiO2 interface; annealing; electron irradiation; Annealing; Electron accelerators; Laser theory; MOS capacitors; Physics; Plasma temperature; Radiation effects; Research and development; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810506
  • Filename
    810506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348203