DocumentCode
348207
Title
The modelling of the thermal field from a semiconductor structure using the finite elements method
Author
Schiopu, Paul ; Degeratu, Vasile ; Lazar, G. ; Lakatos, Eugen ; Ivan, Stefania
Author_Institution
Politehnica Univ. Bucharest, Romania
Volume
1
fYear
1999
fDate
1999
Firstpage
261
Abstract
This work treats the evacuation of heat generated in discrete power semiconductor devices in steady state. Using an analytical model based on Galerkin´s method one can determine the thermal field configuration by means of finite elements which permit to obtain conclusions according with experimental results regarding the effect of junction depth and of contact surface and of the material (semiconductor) inhomogeneity upon the evacuation possibilities of heat
Keywords
Galerkin method; finite element analysis; power semiconductor devices; semiconductor device models; Galerkin method; finite element model; heat generation; power semiconductor device; thermal field; Analytical models; Contacts; Electric resistance; Finite element methods; Heat transfer; Metallization; Surface resistance; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810511
Filename
810511
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